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BDX53A Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDX53A Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BDX53/A/B/C CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX53 45 BDX53A 60 BDX53B 80 VCEO(SUS) Collector-emitter sustaining voltage BDX53C IC=0.1A, IB=0 100 V VCEsat Collector-emitter saturation voltage IC=3A ,IB=12mA 2.0 V VBE sat Base-emitter saturation voltage IC=3A ,IB=12mA 2.5 V BDX53 VCB=45V, IE=0 BDX53A VCB=60V, IE=0 BDX53B VCB=80V, IE=0 ICBO Collector cut-off current BDX53C VCB=100V, IE=0 0.2 mA BDX53 VCE=22V, IB=0 BDX53A VCE=30V, IB=0 BDX53B VCE=40V, IB=0 ICEO Collector cut-off current BDX53C VCE=50V, IB=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 2.0 mA hFE DC current gain IC=3A ; VCE=3V 750 VF-1 Forward diode voltage IF=3A 1.8 2.5 V VF-2 Forward diode voltage IF=8A 2.5 V |
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