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FC40SA50FK Scheda tecnica(PDF) 3 Page - Vishay Siliconix |
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FC40SA50FK Scheda tecnica(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Document Number: 94542 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 12-May-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 FC40SA50FKP Power MOSFET, 40 A Vishay Semiconductors Notes (1) Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) (2) Pulse width ≤ 300 μs; duty cycle ≤ 2 % Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature DIODE CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Continuous source current (body diode) IS MOSFET symbol showing the integral reverse p-n junction diode -- 40 A Pulsed source current (body diode) ISM (1) - - 160 Diode forward voltage VSD (2) TJ = 25 °C, IS = 40 A, VGS = 0 V - - 1 V Reverse recovery time trr (2) TJ = 25 °C, IF = 47 A; dI/dt = 100 A/μs - 620 940 ns Reverse recovery charge Qrr -14 21 μC Reverse recovery current IRRM TJ = 25 °C - 38 - A Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD) S D G 0.01 0.1 1 10 100 1000 0.1 1 10 100 V GS TO P 15 10 8.0 7.0 6.0 5.5 BO TTO M 5.0 5 V 20 μs PULSE WIDTH TJ=25°C VDS, Drain-to-Source Voltage (V) 0.1 1 10 100 1000 0.1 1 10 100 V GS TO P 15 10 8.0 7.0 6.0 5.5 5.0 BOTTOM 4.5 4.5 V 20 μs PULSE WIDTH T150°C VDS, Drain-to-Source Voltage (V) 0.1 1 10 100 1000 4 5 6 7 8 9 10 11 12 V GS, Gate-to-Source V oltage (V ) T J=150°C T J=25°C V DS=20V 20μs PULSE WIDTH 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J, Junction Temperature (°C) V GS =10V I D=24A |
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