FC40SA50FK datasheet(3/10 Pages) VISHAY

Il numero della parte	FC40SA50FK

Spiegazioni elettronici	Power MOSFET, 40 A

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Produttore elettronici	VISHAY [Vishay Siliconix]

Homepage	http://www.vishay.com

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Document Number: 94542

For technical questions within your region, please contact one of the following:

www.vishay.com

Revision: 12-May-10

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

3

FC40SA50FKP

Power MOSFET, 40 A

Vishay Semiconductors

Notes

(1) Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

(2) Pulse width

≤ 300 μs; duty cycle ≤ 2 %

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

DIODE CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Continuous source current

(body diode)

IS

MOSFET symbol

showing the integral reverse

p-n junction diode

--

40

A

Pulsed source current (body diode)

ISM (1)

-

160

Diode forward voltage

VSD (2)

TJ = 25 °C, IS = 40 A, VGS = 0 V

-

1

V

Reverse recovery time

trr (2)

TJ = 25 °C, IF = 47 A; dI/dt = 100 A/μs

-

620

940

ns

Reverse recovery charge

Qrr

-14

21

μC

Reverse recovery current

IRRM

TJ = 25 °C

-

38

-

A

Forward turn-on time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD)

S

D

G

0.01

0.1

1

10

100

1000

0.1

1

10

100

V

GS

TO P

15

10

8.0

7.0

6.0

5.5

BO TTO M 5.0

5 V

20 μs PULSE WIDTH

TJ=25°C

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

0.1

1

10

100

V

GS

TO P

15

10

8.0

7.0

6.0

5.5

5.0

BOTTOM 4.5

4.5 V

20 μs PULSE

WIDTH

T150°C

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

4

5

6

7

8

9

10

11

12

V

GS, Gate-to-Source V oltage (V )

T

J=150°C

T

J=25°C

V

DS=20V

20μs PULSE WIDTH

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

-60 -40 -20

0

20

40

60

80 100 120 140 160

T

J, Junction Temperature (°C)

V

GS =10V

I

D=24A

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