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BD312 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD312 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors BD312 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ; IB=0 -60 V VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -1.0 V VBEsat Base-emitter saturation voltage IC=-5A ;IB=-0.5A -1.8 V VBE Base-emitter on voltage IC=-5A ;VCE=-4V -1.5 V ICBO Collector cut-off current VCB=rated;IE=0 -1.0 mA IEBO Emitter cut-off current VEB=-7V; IC=0 -1.0 mA hFE-1 DC current gain IC=-5A ; VCE=-4V 25 hFE-2 DC current gain IC=-10A ; VCE=-4V 5 fT Transition frequency IC=-0.5A ; VCE=-10V,f=1MHz 4 MHz |
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