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BD242 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BD242 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD242/A/B/C DESCRIPTION ・ ・With TO-220C package ・Complement to type BD241/A/B/C APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT BD242 -55 BD242A -70 BD242B -90 VCBO Collector-base voltage BD242C Open emitter -115 V BD242 -45 BD242A -60 BD242B -80 VCEO Collector-emitter voltage BD242C Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -3 A ICM Collector current-peak -5 A IB Base current -1 A PC Collector power dissipation TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ |
Codice articolo simile - BD242 |
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Descrizione simile - BD242 |
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