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2SD2129 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD2129 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD2129 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 100 V VCEsat-1 Collector-emitter saturation voltage IC=1.5A ;IB=3mA 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=3A ;IB=12mA 2.0 V VBEsat Base-emitter saturation voltage IC=1.5A ;IB=3mA 2.0 V ICBO Collector cut-off current VCB=100V; IE=0 100 μA IEBO Emitter cut-off current VEB=6V; IC=0 2.5 mA hFE-1 DC current gain IC=1.5A ; VCE=3V 2000 15000 hFE-2 DC current gain IC=3A ; VCE=3V 1000 Switching times ton Turn-on time 1.0 μs ts Storage time 5.0 μs tf Fall time IB1=-IB2=3mA VCC≈30V ,RL=20Ω 2.0 μs |
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