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2SD1407 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1407 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1407 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 100 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A 2.0 V VBE Base-emitter voltage IC=1A; VCE=5V 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 40 240 hFE-2 DC current gain IC=4A ; VCE=5V 20 fT Transition frequency IC=1A; VCE=5V 12 MHz COB Collector output capacitance f=1MHz ; VCB=10V;IE=0 100 pF hFE-1 Classifications R O Y 40-80 70-140 120-240 |
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