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2SD1233 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1233 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1233 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 110 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A, IB= 8mA B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A, IB= 8mA B 2.0 V ICBO Collector Cutoff current VCB= 80V, IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA fT Current-Gain—Bandwidth Product IC= 4A; VCE= 5V 20 MHz hFE DC Current Gain IC= 4A; VCE= 3V 1500 Switching Times ton Turn-On Time 0.6 μs tstg Storage Time 4.8 μs tf Fall Time IC = 4A, IB1 = -IB2= 8mA; RL= 12.5Ω; VCC= 50V 1.6 μs isc Website:www.iscsemi.cn |
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