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2SD1190 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1190 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1190 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 60 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 70 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 4mA B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 4mA B 2.0 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA hFE DC Current Gain IC= 2A; VCE= 2V 2000 fT Current-Gain—Bandwidth Product IC= 2A; VCE= 5V 20 MHz Switching times ton Turn-on Time 0.6 μs tstg Storage Time 2.7 μs tf Fall Time IC= 2A, IB1= -IB2= 4mA RL= 10Ω; VCC= 20V; PW= 50μs; Duty Cycle≤1% 1.6 μs isc Website:www.iscsemi.cn 2 |
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