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2SD113 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD113 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD113 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 3A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 15A; IB= 3A 2.5 V ICBO Collector Cutoff Current VCB= 50V; IE= 0 2 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 50 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 50 300 hFE-2 DC Current Gain IC= 15A; VCE= 5V 10 COB Output Capacitance IE= 0; VCB= 50V; ftest= 1.0MHz 400 pF fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V 1.5 MHz hFE-1 Classifications O Y 50-150 100-300 isc Website:www.iscsemi.cn |
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