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2SC4159 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4159 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4159 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 180 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ 160 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA 0.3 V VBE(on) Base-Emitter On Voltage IC= 10mA; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 10 μA hFE DC Current Gain IC= 300mA; VCE= 5V 60 200 fT Current-Gain—Bandwidth Product IC= 50mA; VCE= 10V 100 MHz COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 23 pF Switching Times ton Turn-on Time 0.15 μs tstg Storage Time 0.81 μs tf Fall Time IC= 0.5A, RL= 40Ω, IB1= -IB2= 50mA, VCC= -20V; PW= 20μs 0.48 μs hFE Classifications D E 60-120 100-200 isc Website:www.iscsemi.cn 2 |
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