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2SC3710 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3710 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3710 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 80 V VCEsat Collector-emitter saturation voltage IC=6A;IB=0.3A 0.2 0.4 V VBEsat Base-emitter saturation voltage IC=6A;IB=0.3A 0.9 1.2 V ICBO Collector cut-off current VCB=80V; IE=0 10 μA IEBO Emitter cut-off current VEB=6V; IC=0 10 μA hFE-1 DC current gain IC=1A ; VCE=1V 70 240 hFE-2 DC current gain IC=6A ; VCE=1V 40 COB Output capacitance IE=0 ; VCB=10V, f=1MHz 220 pF fT Transition frequency IC=1A ; VCE=5V 80 MHz Switching times ton Turn-on time 0.2 μs ts Storage time 1.0 μs tf Fall time IB1=-IB2=0.3A VCC≈30V ,RL=5Ω 0.2 μs hFE-1 Classifications O Y 70-140 120-240 |
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