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2SC3482 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3482 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3482 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 1500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.2A B 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 40 130 mA hFE DC Current Gain IC= 1A; VCE= 5V 8 VECF C-E Diode Forward Voltage IF= 6A 2.0 V fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V 3 MHz tstg Storage Time 3.0 μs tf Fall Time IC= 5A, IB1= 1A; IB2= -2A; RL= 40Ω; VCC= 200V 0.3 μs isc Website:www.iscsemi.cn 2 |
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