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2SC1969 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC1969 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1969 DESCRIPTION ·High Power Gain- : Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applications in HF band. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage RBE= ∞ 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 6 A Collector Power Dissipation @TC=25℃ 20 PC Collector Power Dissipation @Ta=25℃ 1.7 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 73.5 ℃/W Rth j-c Thermal Resistance,Junction to Case 6.25 ℃/W isc Website:www.iscsemi.cn |
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