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FM1808B-SG Scheda tecnica(PDF) 1 Page - Ramtron International Corporation |
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FM1808B-SG Scheda tecnica(HTML) 1 Page - Ramtron International Corporation |
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1 / 11 page  Preliminary This is a product that has fixed target specifications but are subject Ramtron International Corporation to change pending characterization results. 1850 Ramtron Drive, Colorado Springs, CO 80921 (800) 545-FRAM, (719) 481-7000 Rev. 1.2 http://www.ramtron.com Mar. 2011 Page 1 of 11 FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 1 Trillion (10 12) Read/Writes • 38 year Data Retention (@ +75 °C) • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules • No Battery Concerns • Monolithic Reliability • True Surface Mount Solution, No Rework Steps • Superior for Moisture, Shock, and Vibration • Resistant to Negative Voltage Undershoots SRAM & EEPROM Compatible • JEDEC 32Kx8 SRAM & EEPROM pinout • 70 ns Access Time • 130 ns Cycle Time Low Power Operation • 15 mA Active Current • 25 µA (typ.) Standby Current Industry Standard Configuration • Industrial Temperature -40 °C to +85°C • 28-pin “Green”/RoHS SOIC Package Description The FM1808B is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. It provides data retention for 38 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make F-RAM superior to other types of nonvolatile memory. In-system operation of the FM1808B is very similar to other RAM devices. Minimum read- and write- cycle times are equal. The F-RAM memory, however, is nonvolatile due to its unique ferroelectric memory process. Unlike BBSRAM, the FM1808B is a truly monolithic nonvolatile memory. It provides the same functional benefits of a fast write without the disadvantages associated with modules and batteries or hybrid memory solutions. These capabilities make the FM1808B ideal for nonvolatile memory applications requiring frequent or rapid writes in a bytewide environment. The availability of a true surface-mount package improves the manufacturability of new designs. Device specifications are guaranteed over an industrial temperature range of -40°C to +85°C. Pin Configuration Ordering Information FM1808B-SG 28-pin “Green”/RoHS SOIC A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS DQ3 DQ4 DQ5 DQ6 DQ7 CE A10 OE A11 A9 A8 A13 WE VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 |
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