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2N3583 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N3583 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3583 DESCRIPTION ·Contunuous Collector Current-IC= 1A ·Power Dissipation-PD=35W @TC= 25℃ ·Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0 V(Max)@ IC = 1A APPLICATIONS ·Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching regu- lators, converters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 175 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.0 A ICM Collector Current-Peak 5.0 A IB B Base Current 1.0 A PC Collector Power Dissipation@TC=25℃ 35 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5.0 ℃/W isc Website:www.iscsemi.cn |
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