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STPS10M80CR Scheda tecnica(PDF) 5 Page - STMicroelectronics |
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STPS10M80CR Scheda tecnica(HTML) 5 Page - STMicroelectronics |
5 / 11 page STPS10M80C Characteristics Doc ID 018734 Rev 1 5/11 Figure 14. Thermal resistance junction to ambient versus copper surface under tab for D2PAK Figure 12. Forward voltage drop versus forward current (per diode) Figure 13. Reverse safe operating area (tp < 1 µs and Tj < 150 °C) 0 1 2 3 4 5 6 7 8 9 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 (Typical values) T = 125 °C j (Maximum values) T = 125 °C j (Maximum values) T = 25 °C j I (A) FM V (V) FM 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 100 105 110 115 120 125 130 135 140 145 150 I (A) arm I (V ) 150 °C, 1 µs arm arm V (V) arm 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 DPAK 2 R (°C/W) th(j-a) S (cm ) Cu 2 epoxy printed board copper thickness = 35 µm |
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