Motore di ricerca datesheet componenti elettronici |
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ES1J Scheda tecnica(PDF) 2 Page - Diotec Semiconductor |
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ES1J Scheda tecnica(HTML) 2 Page - Diotec Semiconductor |
2 / 2 page ES1A ... ES1J Characteristics Kennwerte Type Typ Reverse recovery time Sperrverzugszeit t rr [ns] 1) Forward voltage Durchlass-Spannung V F [V] at / bei I F [A] ES1A...ES1D < 15 < 0.92 1 ES1F...ES1G < 25 < 1.3 1 ES1J < 35 < 1.7 1 Leakage current Sperrstrom Tj = 25°C Tj = 100°C VR = VRRM VR = VRRM IR IR < 5 µA < 100 µA Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 70 K/W 2) Thermal resistance junction to terminal Wärmewiderstand Sperrschicht – Anschluss RthT < 30 K/W 1 I F = 0.5 A through/über IR = 1 A to/auf IR = 0.25 A 2 Mounted on P.C. board with 25 mm2 copper pads at each terminal Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 http://www.diotec.com/ © Diotec Semiconductor AG Rated forward current vs. temp. of the terminals in Abh. v. d. Temp. der Terminals Zul. Richtstrom 120 100 80 60 40 20 0 I FAV [%] [°C] T T 150 100 50 0 [A] I F Forward characteristics (typical values) Durchlasskennlinien (typische Werte) [V] V F 10 1 0.1 10 10 -2 -3 ES1A...D T = 25°C j ES1F...G ES1J |
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