SI2301 datasheet(1/5 Pages) MCC

Il numero della parte	SI2301

Spiegazioni elettronici	P-Channel Enhancement Mode Field Effect Transistor

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Produttore elettronici	MCC [Micro Commercial Components]

Homepage	http://www.mccsemi.com

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SI2301

P-Channel

Enhancement Mode

Field Effect Transistor

Features

•

-20V,-2.8A, RDS(ON)=120m

Ω@VGS=-4.5V

RDS(ON)=150m

Ω@VGS=-2.5V

•

High dense cell design for extremely low RDS(ON)

•

Rugged and reliable

•

High Speed Switching

•

SOT-23 Package

•

Marking Code: S1

Maximum Ratings @ 25OC Unless Otherwise Specified

Symbol

Parameter

Rating

Unit

VDS

Drain-source Voltage

-20

V

ID

Drain Current-Continuous

-2.8

A

IDM

Drain Current-Pulsed

a

-10

A

VGS

Gate-source Voltage

±8

V

PD

Total Power Dissipation

1.25

W

RθJA

Thermal Resistance Junction to Ambient

b

100

℃/W

TJ

Operating Junction Temperature

-55 to +150

℃

TSTG

Storage Temperature

-55 to +150

℃

Internal Block Diagram

S

G

D

Micro Commercial Components

MCC

TM

omponents

20736 Marilla Street Chatsworth

!"#

$% !"#

Revision:

A

20

11/01/01

www.mccsemi.com

1 of 5

SOT-23

Suggested Solder

Pad Layout

DIMENSIONS

INCHES

MM

DIM

MIN

MAX

MIN

MAX

NOTE

A

.110

.120

2.80

3.04

B

.083

.098

2.10

2.64

C

.047

.055

1.20

1.40

D

.035

.041

.89

1.03

E

.070

.081

1.78

2.05

F

.018

.024

.45

.60

G

.0005

.0039

.013

.100

H

.035

.044

.89

1.12

J

.003

.007

.085

.180

K

.015

.020

.37

.51

A

B

C

D

E

F

G

H

J

.079

2.000

inches

mm

.031

.800

.035

.900

.037

.950

.037

.950

K

2

3

1

1.GATE

2. SOURCE

3. DRAIN

•

Epoxy meets UL 94 V-0 flammability rating

•

Moisture Sensitivity Level 1

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