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TSC5304EDCHC5 Scheda tecnica(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Il numero della parte TSC5304EDCHC5
Spiegazioni elettronici  High Voltage NPN Transistor with Diode
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Produttore elettronici  TSC [Taiwan Semiconductor Company, Ltd]
Homepage  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSC5304EDCHC5 Scheda tecnica(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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TSC5304ED
High Voltage NPN Transistor with Diode
1/6
Version: C10
TO-251
(IPAK)
TO-252
(DPAK)
PRODUCT SUMMARY
BVCEO
400V
BVCBO
700V
IC
4A
VCE(SAT)
0.25V (Typ.) @ IC=0.5A, IB=0.1A
Features
Build-in Free-wheeling Diode Makes Efficient Anti-
saturation Operation
No Need to Interest an hfe Value Because of Low
Variable Storage-time Spread Even Though Comer
Spirit Product.
Low Base Drive Requirement
Suitable for Half Bridge Light Ballast Application
Block Diagram
Structure
Silicon Triple Diffused Type
NPN Silicon Transistor
Integrated Anti-parallel Collector-Emitter Diode
Ordering Information
Part No.
Package
Packing
TSC5304EDCP RO
TO-252
2.5Kpcs / 13” Reel
TSC5304EDCH C5
TO-251
75pcs / Tube
Absolute Maximum Rating (Ta = 25
oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
700
V
Collector-Emitter Voltage @ VBE=0V
VCES
700
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
9
V
Collector Current
IC
4
A
Collector Peak Current (tp <5ms)
ICM
8
A
Base Current
IB
2
A
Base Peak Current (tp <5ms)
IBM
4
A
Power Total Dissipation @ Tc=25ºC
PDTOT
35
W
Maximum Operating Junction Temperature
TJ
+150
oC
Storage Temperature Range
TSTG
-55 to +150
oC
Pin Definition:
1. Base
2. Collector
3. Emitter


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