2N2222ADCSM datasheet(2/2 Pages) SEME-LAB

Il numero della parte	2N2222ADCSM

Spiegazioni elettronici	DUAL HIGH SPEED, MEDIUM POWER

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2N2222ADCSM

DOC 7168 Issue 1

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td

Delay Time

tr

Rise Time

ts

Storage Time

tf

Fall Time

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

IC = 10mA

IC = 10μA

IE = 10μAIC = 0

IB = 0

VCE = 60V

IE = 0

VCB = 60V

TC = 125°C

IC = 0

VEB = 3V (off)

VCE = 60V

VEB = 3V (off)

IC = 150mA

IB = 15mA

IC = 500mA

IB = 50mA

IC = 150mA

IB = 15mA

IC = 500mA

IC = 50mA

IC = 0.1mA

VCE = 10V

IC = 1mA

VCE = 10V

IC = 10mA

VCE = 10V

IC = 10mA

VCE = 10V

IC = 150mA

VCE = 10V

IC = 150mA

VCE = 1V

IC = 500mA

VCE = 10V

ELECTRICAL CHARACTERISTICS PER SIDE (T

C = 25°C unless otherwise stated)

VCEO(sus)* Collector – Emitter Sustaining Voltage

V(BR)CBO*

Collector – Base Breakdown Voltage

V(BR)EBO*

Emitter – Base Breakdown Voltage

ICEX*

Collector Cut-off Current (IC = 0)

ICBO*

Collector – Base Cut-off Current

IEBO*

Emitter Cut-off Current (IC = 0)

IBL*

Base Current

VCE(sat)*

Collector – Emitter Saturation Voltage

VBE(sat)*

Base – Emitter Saturation Voltage

hFE*

DC Current Gain

TA = –55°C

40

75

6

10

20

0.3

1

0.6

1.2

2

35

50

75

35

100

300

50

40

V

nA

μA

nA

V

—

fT

Transition Frequency

Cob

Output Capacitance

Cib

Input Capacitance

hfe

Small Signal Current Gain

IC = 20mA

VCE = 20V

f = 100MHz

VCB = 10V

IE = 0

f = 1.0MHz

VBE = 0.5V

IC = 0

f = 1.0MHz

IC = 1mA

VCE = 10V

f = 1kHz

IC = 10mA

VCE = 10V

f = 1kHz

300

8

30

50

300

75

375

MHz

pF

10

25

225

60

ns

VCC = 30V

VBE = 0.5V (off)

IC1 = 150mA

IB1 = 15mA

VCC = 30V

IC = 150mA

IB1 = IB2 = 15mA

fT is defined as the frequency at which hFE extrapolates to unity.

* Pulse test tp = 300μs , δ ≤ 2%

DYNAMIC CHARACTERISTICS PER SIDE (T

C = 25°C unless otherwise stated)

SWITCHING CHARACTERISTICS PER SIDE (RESISTIVE LOAD)

(TC = 25°C unless otherwise stated)

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