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2SA1036-R Scheda tecnica(PDF) 1 Page - Micro Commercial Components |
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2SA1036-R Scheda tecnica(HTML) 1 Page - Micro Commercial Components |
1 / 3 page PNP Silicon Epitaxial Transistors Features omponents 20736 Marilla Street Chatsworth !"# $% !"# MCC Revision: A 20 11/01/01 TM Micro Commercial Components www.mccsemi.com 1 of 3 SOT-23 Suggested Solder Pad Layout DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .110 .120 2.80 3.04 B .083 .098 2.10 2.64 C .047 .055 1.20 1.40 D .035 .041 .89 1.03 E .070 .081 1.78 2.05 F .018 .024 .45 .60 G .0005 .0039 .013 .100 H .035 .044 .89 1.12 J .003 .007 .085 .180 K .015 .020 .37 .51 A B C D E F G H J .079 2.000 inches mm .031 .800 .035 .900 .037 .950 .037 .950 K Maximum Ratings @ Ta = 25 (unless otherwise noted) Symbol Parameter Value Unit IC Collector Current -0.5 A PD Collector Power Dissipation 0.2 W TJ Junction Temperature 150 TSTG Storage Temperature Range -55 to +150 Electrical Characteristics @ 25 OC Unless Otherwise Specified Symbol Parameter Min TYPE Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage (IC=-1mAdc,IB=0) -32 V V(BR)CBO Collector-Base Breakdown Voltage (IC=-100uAdc,IE=0) -40 V V(BR)EBO Collector-Base Breakdown Voltage (IE=-100uAdc,IC=0) -5.0 V ICBO Collector-Base Cutoff Current (VCB=-20Vdc, IE=0) - 1 µAdc IEBO Emitter-Base Cutoff Current (VEB=-4.0Vdc, IC=0) - 1 uAdc ON CHARACTERISTICS HFE DC Current Gain (IC=-10mAdc, VCE=-3.0Vdc) 82 390 VCE(sat) Collector-Emitter Saturation Voltage (IC=-100mAdc, IB=-10mAdc) -0.4 Vdc )7 Transition Frequency (VCE=-5Vdc,IC=-20mAdc,f=100MHZ) 200 MHZ CLASSIFICATION OF hFE Rank P Q R Range 82-180 120-270 180-390 E B C Large IC. ICMax.= - 0.5 A Low VCE(sat). Ideal for low-voltage operation. Cob (VCB=-10Vdc,IE=0,f=1MHZ) 7 pF 2SA1036-P 2SA1036-Q 2SA1036-R Marking HP HQ HR • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • • |
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