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IRLHS6342PBF Scheda tecnica(PDF) 2 Page - International Rectifier |
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IRLHS6342PBF Scheda tecnica(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRLHS6342PbF 2 www.irf.com S D G Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.39mH, RG = 50Ω, IAS = 8.5A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Rθ is measured at TJ of approximately 90°C.
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to 12A by die-source to lead-frame bonding technology Thermal Resistance Parameter Typ. Max. Units RθJC (Bottom) Junction-to-Case g ––– 13 RθJC (Top) Junction-to-Case g ––– 90 °C/W RθJA Junction-to-Ambient f ––– 60 RθJA Junction-to-Ambient (<10s) f ––– 42 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 22 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 12.0 15.5 ––– 15.0 19.5 VGS(th) Gate Threshold Voltage 0.5 ––– 1.1 V ∆VGS(th) Gate Threshold Voltage Coefficient ––– -4.2 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 39 ––– ––– S Qg Total Gate Charge ––– 11 ––– VDS = 15V Qgs Gate-to-Source Charge ––– 0.5 ––– Qgd Gate-to-Drain Charge ––– 4.6 ––– RG Gate Resistance ––– 2.1 ––– Ω td(on) Turn-On Delay Time ––– 4.9 ––– tr Rise Time –––13––– td(off) Turn-Off Delay Time ––– 19 ––– tf Fall Time ––– 13 ––– Ciss Input Capacitance ––– 1019 ––– Coss Output Capacitance ––– 97 ––– Crss Reverse Transfer Capacitance ––– 70 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.2 V trr Reverse Recovery Time ––– 11 17 ns Qrr Reverse Recovery Charge ––– 13 20 nC ton Forward Turn-On Time Time is dominated by parasitic Inductance VDS = VGS, ID = 10µA VGS = 2.5V, ID = 8.5A e Typ. m Ω VDD = 15V, VGS = 4.5V ––– RG=1.8 Ω VDS = 10V, ID = 8.5A VDS = 24V, VGS = 0V, TJ = 125°C µA ID = 8.5A (See Fig. 6 & 17) ID = 8.5A VGS = 0V VDS = 25V VDS = 24V, VGS = 0V TJ = 25°C, IF = 8.5A, VDD = 15V di/dt = 300 A/µs eà TJ = 25°C, IS = 8.5A, VGS = 0V e showing the integral reverse p-n junction diode. Conditions See Fig.18 Max. 14 8.5 ƒ = 1.0MHz Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 4.5V, ID = 8.5A e ––– ––– 76 ––– ––– 12 i MOSFET symbol nA ns A pF nC VGS = 4.5V ––– VGS = 12V VGS = -12V |
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