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IRLHS6276TRPBF Scheda tecnica(PDF) 2 Page - International Rectifier |
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IRLHS6276TRPBF Scheda tecnica(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRLHS6276PbF 2 www.irf.com S D G Notes: Repetitive rating; pulse width limited by max. junction temperature. Current limited by package. Pulse width ≤ 400μs; duty cycle ≤ 2%. When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C. For DESIGN AID ONLY, not subject to production testing. Thermal Resistance Parameter Typ. Max. Units RθJC (Bottom) Junction-to-Case g ––– 19 RθJC (Top) Junction-to-Case g ––– 175 °C/W RθJA Junction-to-Ambient f ––– 86 RθJA (<10s) Junction-to-Ambient f ––– 69 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 20 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 9.3 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 33 45 ––– 46 62 VGS(th) Gate Threshold Voltage 0.5 0.8 1.1 V ΔVGS(th) Gate Threshold Voltage Coefficient ––– -3.8 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 8.8 ––– ––– S Qg Total Gate Charge h ––– 3.1 ––– VDS = 10V Qgs Gate-to-Source Charge h –––0.22––– Qgd Gate-to-Drain Charge h ––– 1.3 ––– RG Gate Resistance ––– 4.0 ––– Ω td(on) Turn-On Delay Time ––– 4.4 ––– tr Rise Time ––– 9.3 ––– td(off) Turn-Off Delay Time ––– 10 ––– tf Fall Time ––– 4.9 ––– Ciss Input Capacitance ––– 310 ––– Coss Output Capacitance ––– 79 ––– Crss Reverse Transfer Capacitance ––– 49 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.2 V trr Reverse Recovery Time ––– 5.2 7.8 ns Qrr Reverse Recovery Charge ––– 5.0 7.5 nC ton Forward Turn-On Time Time is dominated by parasitic Inductance VDS = VGS, ID = 10μA VGS = 2.5V, ID = 3.4A ed m Ω VDD = 10V, VGS = 4.5V RG=1.8 Ω VDS = 10V, ID = 3.4Ad VDS = 16V, VGS = 0V, TJ = 125°C μA ID = 3.4Ad (See Fig.17 & 18) ID = 3.4A d VGS = 0V VDS = 10V VDS = 16V, VGS = 0V TJ = 25°C, IF = 3.4Ad, VDD = 10V di/dt = 126A/μs eà TJ = 25°C, IS = 3.4Ad, VGS = 0V e showing the integral reverse p-n junction diode. Conditions See Fig.15 ƒ = 1.0MHz Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 4.5V, ID = 3.4A ed ––– ––– 40 ––– ––– 9.6 d MOSFET symbol nA ns A pF nC VGS = 4.5V VGS = 12V VGS = -12V |
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