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BCX5310TA Scheda tecnica(PDF) 2 Page - Diodes Incorporated

Il numero della parte BCX5310TA
Spiegazioni elettronici  PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89
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Produttore elettronici  DIODES [Diodes Incorporated]
Homepage  http://www.diodes.com
Logo DIODES - Diodes Incorporated

BCX5310TA Scheda tecnica(HTML) 2 Page - Diodes Incorporated

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BCX 51 / 52 / 53
Datasheet Number: DS35368 Rev. 2 – 2
2 of 7
www.diodes.com
June 2011
© Diodes Incorporated
BCX 51 / 52 / 53
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Symbol
BCX51
BCX52
BCX53
Unit
Collector-Base Voltage
VCBO
-45
-60
-100
V
Collector-Emitter Voltage
VCEO
-45
-60
-80
V
Emitter-Base Voltage
VEBO
-5
V
Continuous Collector Current
IC
-1
A
Peak Pulse Collector Current
ICM
-1.5
Continuous Base Current
IB
-100
mA
Peak Pulse Base Current
IBM
-200
Thermal Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 4)
PD
1
W
Thermal Resistance, Junction to Ambient (Note 4)
RθJA
124
°C/W
Thermal Resistance, Junction to Leads (Note 5)
RθJL
10.0
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Notes:
4. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
5. Thermal resistance from junction to solder-point (on the exposed collector pad).


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