BCP5210TA datasheet(4/7 Pages) DIODES

Il numero della parte	BCP5210TA

Spiegazioni elettronici	PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

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Produttore elettronici	DIODES [Diodes Incorporated]

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4 / 7 page

BCP 51 / 52 / 53

Datasheet Number: DS35366 Rev. 2 – 2

4 of 7

www.diodes.com

June 2011

BCP 51 / 52 / 53

Electrical Characteristics @ TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base

Breakdown Voltage

BCP51

BVCBO

-45

-

V

IC = -100µA

BCP52

-60

BCP53

-100

Collector-Emitter

Breakdown Voltage (Note 6)

BCP51

BVCEO

-45

-

V

IC = -10mA

BCP52

-60

BCP53

-80

Emitter-Base Breakdown Voltage

BVEBO

-5

-

V

IE = -10µA

Collector Cut-off Current

ICBO

-

-0.1

-20

µ

A

VCB = -30V

VCB = -30V, TA = 150°C

Emitter Cut-off Current

IEBO

-

-20

nA

VEB = -4V

Static Forward Current Transfer Ratio (Note 6)

All versions

hFE

25

40

25

-

250

-

IC = -5mA, VCE = -2V

IC = -150mA, VCE = -2V

IC = -500mA, VCE = -2V

10 gain grp

63

-

160

IC = -150mA, VCE = -2V

16 gain grp

100

-

250

IC = -150mA, VCE = -2V

Collector-Emitter Saturation Voltage (Note 6)

VCE(sat)

-

-0.5

V

IC = -500mA, IB = -50mA

Base-Emitter Turn-On Voltage (Note 6)

VBE(on)

-

-1.0

V

IC = -500mA, VCE = -2V

Transition Frequency

fT

150

-

MHz

IC = -50mA, VCE = -10V

f = 100MHz

Output Capacitance

Cobo

-

25

pF

VCB = -10V, f = 1MHz

Notes:

6. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle ≤ 2%.

0

0.2

0.4

0.6

0.8

1.0

01

2

3

4

5

-V

, COLLECTOR-EMITTER VOLTAGE (V)

CE

I = 2mA

B

I = 4mA

B

I = 6mA

B

I = 8mA

B

I = 10mA

B

Fig. 1 Typical Collector Current

vs. Collector-Emitter Voltage

0

100

200

300

400

500

0.001

0.01

0.1

1

10

-I , COLLECTOR CURRENT (A)

C

Fig. 2 Typical DC Current Gain vs. Collector Current

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

V

= -5V

CE

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