MJE4343_06 datasheet(2/7 Pages) ONSEMI

Il numero della parte	MJE4343

Spiegazioni elettronici	High?뭋oltage High Power Transistors

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MJE4343 MJE4353

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (1)

(IC = 200 mAdc, IB = 0)

VCEO(sus)

160

—

Vdc

Collector−Emitter Cutoff Current

(VCE = 80 Vdc, IB = 0)

ICEO

—

750

μAdc

Collector−Emitter Cutoff Current

(VCE = Rated VCB, VEB(off) = 1.5 Vdc)

(VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150_C)

ICEX

—

1.0

5.0

mAdc

Collector−Base Cutoff Current

(VCB = Rated VCB, IE = 0)

ICBO

—

750

μAdc

Emitter−Base Cutoff Current

(VBE = 7.0 Vdc, IC = 0)

IEBO

—

1.0

mAdc

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 8.0 Adc, VCE = 2.0 Vdc)

(IC = 16 Adc, VCE = 4.0 Vdc)

hFE

15

8.0

35 (Typ)

15 (Typ)

—

Collector−Emitter Saturation Voltage

(IC = 8.0 Adc, IB = 800 mA)

(IC = 16 Adc, IB = 2.0 Adc)

VCE(sat)

—

2.0

3.5

Vdc

Base−Emitter Saturation Voltage

(IC = 16 Adc, IB = 2.0 Adc)

VBE(sat)

—

3.9

Vdc

Base−Emitter On Voltage

(IC = 16 Adc, VCE = 4.0 Vdc)

VBE(on)

—

3.9

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain — Bandwidth Product (2)

(IC = 1.0 Adc, VCE = 20 Vdc, ftest = 0.5 MHz)

fT

1.0

—

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

Cob

—

800

pF

(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle w 2.0%.

(2) fT = ⎪hfe⎪• ftest.

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Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
ON Semiconductor	MJE4343G	138Kb / 8P	High-Voltage - High Power Transistors May, 2012 ??Rev. 5

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