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L6227Q Scheda tecnica(PDF) 7 Page - STMicroelectronics |
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L6227Q Scheda tecnica(HTML) 7 Page - STMicroelectronics |
7 / 27 page L6227Q Electrical characteristics 7/27 3 Electrical characteristics Table 5. Electrical characteristics (TA = 25 °C, Vs = 48 V, unless otherwise specified) Symbol Parameter Test condition Min Typ Max Unit VSth(ON) Turn-on threshold 5.8 6.3 6.8 V VSth(OFF) Turn-off threshold 5 5.5 6 V IS Quiescent supply current All Bridges OFF; TJ = -25 °C to 125 °C (1) 510 mA TJ(OFF) Thermal shutdown temperature 165 ° C Output DMOS transistors RDS(on) High-side + low-side switch ON resistance TJ = 25 ° C 1.47 1.69 Ω TJ =125 ° C (1) 2.35 2.7 Ω IDSS Leakage current EN = Low; OUT = VS 2mA EN = Low; OUT = GND -0.3 mA Source drain diodes VSD Forward ON voltage ISD = 1.4 A, EN = LOW 1.15 1.3 V trr Reverse recovery time If = 1.4 A 300 ns tfr Forward recovery time 200 ns Logic input VIL Low level logic input voltage -0.3 0.8 V VIH High level logic input voltage 2 7 V IIL Low level logic input current GND logic input voltage -10 µA IIH High level logic input current 7 V logic input voltage 10 µA Vth(ON) Turn-on input threshold 1.8 2.0 V Vth(OFF) Turn-off input threshold 0.8 1.3 V Vth(HYS) Input threshold hysteresis 0.25 0.5 V Switching characteristics tD(on)EN Enable to out turn ON delay time (2) ILOAD =1.4 A, resistive load 500 800 ns tD(on)IN Input to out turn ON delay time ILOAD =1.4 A, resistive load (dead time included) 1.9 µs tRISE Output rise time(2) ILOAD =1.4 A, resistive load 40 250 ns tD(off)EN Enable to out turn OFF delay time (2) ILOAD =1.4 A, resistive load 500 800 1000 ns tD(off)IN Input to out turn OFF delay time ILOAD =1.4 A, resistive load 500 800 1000 ns tFALL Output fall time (2) ILOAD =1.4 A, resistive load 40 250 ns tdt Dead time protection 0.5 1 µs fCP Charge pump frequency -25 °C < TJ < 125 °C 0.6 1 MHz |
Codice articolo simile - L6227Q_09 |
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Descrizione simile - L6227Q_09 |
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