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L6226Q Scheda tecnica(PDF) 10 Page - STMicroelectronics |
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L6226Q Scheda tecnica(HTML) 10 Page - STMicroelectronics |
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10 / 29 page  Circuit description L6226Q 10/29 Doc ID 14335 Rev 5 4 Circuit description 4.1 Power stages and charge pump The L6226Q integrates two independent power MOS full bridges. Each power MOS has an RDS(on) = 0.73 Ω (typical value @ 25 °C), with intrinsic fast freewheeling diode. Cross conduction protection is achieved using a dead time (td = 1 μs typical) between the switch off and switch on of two power MOS in one leg of a bridge. Using N-channel power MOS for the upper transistors in the bridge requires a gate drive voltage above the power supply voltage. The bootstrapped (VBOOT) supply is obtained through an internal oscillator and few external components to realize a charge pump circuit as shown in Figure 5. The oscillator output (VCP) is a square wave at 600 kHz (typical) with 10 V amplitude. Recommended values/part numbers for the charge pump circuit are shown in Table 6. Figure 5. Charge pump circuit Table 6. Charge pump external components values Component Value CBOOT 220 nF CP 10 nF D1 1N4148 D2 1N4148 |
Codice articolo simile - L6226Q_10 |
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Descrizione simile - L6226Q_10 |
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