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FMI06N60ES Scheda tecnica(PDF) 1 Page - Fuji Electric

Il numero della parte FMI06N60ES
Spiegazioni elettronici  N-CHANNEL SILICON POWER MOSFET
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Produttore elettronici  FUJI [Fuji Electric]
Homepage  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

FMI06N60ES Scheda tecnica(HTML) 1 Page - Fuji Electric

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FMI06N60ES
FUJI POWER MOSFET
Super FAP-E3S series
N-CHANNEL SILICON POWER MOSFET
Features
Maintains both low power loss and low noise
Lower RDS(on) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (3.7±0.5V)
High avalanche durability
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Symbol
Characteristics
Unit
Remarks
Drain-Source Voltage
VDS
600
V
VDSX
600
V
VGS = -30V
Continuous Drain Current
ID
±6
A
Pulsed Drain Current
IDP
±24
A
Gate-Source Voltage
VGS
±30
V
Repetitive and Non-Repetitive Maximum Avalanche Current
IAR
6
A
Note*1
Non-Repetitive Maximum Avalanche Energy
EAS
313.7
mJ
Note*2
Repetitive Maximum Avalanche Energy
EAR
10.5
mJ
Note*3
Peak Diode Recovery dV/dt
dV/dt
3.8
kV/µs
Note*4
Peak Diode Recovery -di/dt
-di/dt
100
A/µs
Note*5
Maximum Power Dissipation
PD
1.67
W
Ta=25°C
105
Tc=25°C
Operating and Storage Temperature range
Tch
150
°C
Tstg
-55 to +150
°C
Outline Drawings [mm]
Equivalent circuit schematic
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Symbol
Conditions
min.
typ.
max.
Unit
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
600
-
-
V
Gate Threshold Voltage
VGS (th)
ID=250µA, VDS=VGS
3.2
3.7
4.2
V
Zero Gate Voltage Drain Current
IDSS
VDS=600V, VGS=0V
Tch=25°C
-
-
25
µA
VDS=480V, VGS=0V
Tch=125°C
-
-
250
Gate-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
-
10
100
nA
Drain-Source On-State Resistance
RDS (on)
ID=3A, VGS=10V
-
1.03
1.20
Forward Transconductance
gfs
ID=3.0A, VDS=25V
2.5
5
-
S
Input Capacitance
Ciss
VDS=25V
VGS=0V
f=1MHz
-
950
1425
pF
Output Capacitance
Coss
-
100
150
Reverse Transfer Capacitance
Crss
-
7.5
11
Turn-On Time
td(on)
Vcc=300V
VGS=10V
ID=3.0A
RG=27Ω
-
29
43.5
ns
tr
-
15
22.5
Turn-Off Time
td(off)
-
75
113
tf
-
16
24
Total Gate Charge
QG
Vcc=300V
ID=6A
VGS=10V
-
31
46.5
nC
Gate-Source Charge
QGS
-
10.5
15.8
Gate-Drain Charge
QGD
-
8
12
Gate-Drain Crossover Charge
QSW
-
4.5
6.75
Avalanche Capability
IAV
L=6.39mH, Tch=25°C
6
-
-
A
Diode Forward On-Voltage
VSD
IF=6A, VGS=0V, Tch=25°C
-
0.90
1.35
V
Reverse Recovery Time
trr
IF=6A, VGS=0V
-di/dt=100A/µs, Tch=25°C
-
0.4
-
µS
Reverse Recovery Charge
Qrr
-
3.3
-
µC
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, IAS=2.4A, L=99.8mH, Vcc=60V, RG=50Ω
EAS limited by maximum channel temperature and avalanche current.
See to 'Avalanche Energy' graph.
Thermal Characteristics
Description
Symbol
Test Conditions
min.
typ.
max.
Unit
Thermal resistance
Rth (ch-c)
Channel to case
1.19
°C/W
Rth (ch-a)
Channel to ambient
75.0
°C/W
Gate(G)
Source(S)
Drain(D)
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
Note *4 : IF≤-ID, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.
Note *5 : IF≤-ID, dv/dt=3.8kV/µs, Vcc≤BVDSS, Tch≤150°C.
T-Pack(L)


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