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FMH28N50ES Scheda tecnica(PDF) 3 Page - Fuji Electric |
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FMH28N50ES Scheda tecnica(HTML) 3 Page - Fuji Electric |
3 / 5 page 33 FUJI POWER MOSFET FMH28N50ES -50 -25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=14A,VGS=10V -50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 typ. max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA Tch [°C] 10 -2 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 10 4 VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 0.1 1 10 100 VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=8.2 Ω td(on) tr tf td(off) ID [A] 0 20 40 60 80 100 120 140 0 2 4 6 8 10 12 14 Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=28A,Tch=25 °C 400V 250V Vcc= 100V |
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