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FMH17N60ES

FUJI POWER MOSFET

N-CHANNEL SILICON POWER MOSFET

Features

Maintains both low power loss and low noise

More controllable switching dv/dt by gate resistance

Narrow band of the gate threshold voltage (4.2±0.5V)

High avalanche durability

Applications

Switching regulators

UPS (Uninterruptible Power Supply)

DC-DC converters

Maximum Ratings and Characteristics

Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)

Description

Symbol

Characteristics

Unit

Remarks

Drain-Source Voltage

600

V

600

V

Continuous Drain Current

±17

A

Pulsed Drain Current

±68

A

Gate-Source Voltage

±30

V

Repetitive and Non-Repetitive Maximum AvalancheCurrent

17

A

Note*1

Non-Repetitive Maximum Avalanche Energy

765.5

mJ

Note*2

Repetitive Maximum Avalanche Energy

28.5

mJ

Note*3

Peak Diode Recovery dV/dt

dV/dt

4.2

kV/µs

Note*4

Peak Diode Recovery -di/dt

-di/dt

100

A/µs

Note*5

Maximum Power Dissipation

2.50

W

Ta=25°C

285

Tc=25°C

Operating and Storage Temperature range

150

°C

-55 to + 150

°C

Outline Drawings [mm]

Equivalent circuit schematic

Electrical Characteristics at Tc=25°C (unless otherwise specified)

Description

Symbol

Conditions

min.

typ.

max.

Unit

Drain-Source Breakdown Voltage

600

-

-

V

Gate Threshold Voltage

3.7

4.2

4.7

V

Zero Gate Voltage Drain Current

-

-

25

µA

-

-

250

Gate-Source Leakage Current

-

10

100

nA

Drain-Source On-State Resistance

-

0.34

0.40

Ω

Forward Transconductance

5.5

11

-

S

Input Capacitance

Ciss

f=1MHz

-

2500

3750

pF

Output Capacitance

Coss

-

280

420

Reverse Transfer Capacitance

Crss

-

16

24

Turn-On Time

td(on)

-

46

69

ns

tr

-

41

61.5

Turn-Off Time

td(off)

-

110

165

tf

-

20

30

Total Gate Charge

-

68

114

nC

Gate-Source Charge

-

23

34.5

Gate-Drain Charge

-

24

36

Gate-Drain Crossover Charge

-

10

15

Avalanche Capability

17

-

-

A

Diode Forward On-Voltage

-

0.90

1.35

V

Reverse Recovery Time

trr

-di/dt=100A/µs, Tch=25°C

-

0.75

-

µS

Reverse Recovery Charge

Qrr

-

10

-

µC

Note *1 : Tch≤150°C

See to 'Avalanche Energy' graph.

Thermal Characteristics

Description

Symbol

Test Conditions

min.

typ.

max.

Unit

Thermal resistance

Rth (ch-c)

Channel to case

0.440

°C/W

Rth (ch-a)

Channel to ambient

50.0

°C/W

Gate(G)

Source(S)

Drain(D)

Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.

See to the 'Transient Themal impeadance' graph.

TO-3P(Q)