PZT882 datasheet(1/2 Pages) SECOS

Il numero della parte	PZT882

Spiegazioni elettronici	Epitaxial Planar Transistor

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Produttore elettronici	SECOS [SeCoS Halbleitertechnologie GmbH]

Homepage	http://www.secosgmbh.com

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PZT882

NPN Transistor

Epitaxial Planar Transistor

RoHS Compliant Product

http://www.SeCoSGmbH.com

Elektronische Bauelemente

The PZT882 is suited for the output

stage of 2W audio, voltage regulator,

and relay driver.

Description

ELECTRICAL CHARACTERISTICS Tamb=25

unless otherwise specified

Parameter

Symbol

Min

Typ.

Max

Uni

Test Conditions

Collector-Base Breakdown Voltage

BVCBO

-

V

IC= 100µA, IE=0

IC= 1mA, IB=0

IE= 10µA

VCB= 30V

VEB=

IC=

VCE= V, IC=

VCE= V, IC= 0.1A,

VCB= 10 , f=1MHz,IE=0

, f=100MHz

*BVCEO

30

-

V

BVEBO

-

V

ICBO

-

1

uA

IEBO

-

uA

*VCE(sat)

-

*VBE(sat)

V

*hFE1

-

*hFE2

500

fT

-

MH

Cob

-

45

pF

z

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Emitter-Base Cutoff Current

Collector Saturation Voltage

Base Saturation Voltage

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

t

40

5

30

100

1

0.5

2

V

3V

2A,IB=0.2A

IC=2A,IB=0.2 A

2

20mA

VCE= V, IC=

2

1 A

5

V

C

-

90

o

MAXIMUM RATINGS

Symbol

Parameter

Value

Collector Current

5

2

55~+150

30

40

3

IC

Tstg

TJ,

Junction and

Total Power Dissipation

VEBO

PD

Emitter-Base Voltage

V

A

W

Storage Temperature

-

C

O

VCEO

Collector-Emitter Voltage

V

VCBO

Collector-Base Voltage

V

Units

ABSOLUTE

Ta=25C

o

-

Classification of hFE

Rank

Q

P

E

100~200

250~500

160~320

Range

5

1.40

1.80

Mi

llimeter

Mi

llimeter

SOT-223

01-Jun-2002 Rev. A

Page 1 of 2

REF.

Min.

Max.

REF.

Min.

Max.

A

6.70

7.30

B

13 C

TYP.

C

2.90

3.10

J

2.30 REF.

D

0.02

0.10

1

6.30

6.70

E

0 C

10 C

2

6.30

6.70

I

0.60

0.80

3

3.30

3.70

H

0.25

0.35

4

3.30

3.70

8 8 2

DateCode

B

C

E

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