2N2609 datasheet(1/1 Pages) MICROSEMI

Il numero della parte	2N2609

Spiegazioni elettronici	P-CHANNEL J-FET

Download	1 Pages

Scroll/Zoom	100%

Produttore elettronici	MICROSEMI [Microsemi Corporation]

Homepage	http://www.microsemi.com

Logo

1 / 1 page

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

P-CHANNEL J-FET

Equivalent To MIL-PRF-19500/296

T4-LDS-0003 Rev. 1 (063374)

Page 1 of 1

DEVICES

LEVELS

2N2609

MQ = JAN Equivalent

ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

Value

Unit

Gate-Source Voltage

VGSS

30

V

Power Dissipation

(1)

TA = +25°C

PD

300

mW

Operating Junction & Storage Temperature Range

Top, Tstg

-65 to + 200

°C

(1) Derate linearly 1.71 mW/°C for TA > +25°C.

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Gate-Source Breakdown Voltage

VDS = 0, IG = 1.0μA dc

V(BR)GSS

30

Vdc

Gate Reverse Current

VDS = 0, VGS = 30V dc

VDS = 0, VGS = 15V dc

IGSS

30

22.5

ηA

Drain Current

VGS = 0V dc, VDS = 5.0V dc

IDSS

-2.0

-10.0

mA

Gate-Source Cutoff Voltage

VDS = 5.0V, ID = 1.0μA dc

VGS(off)

0.75

6.0

Vdc

Magnitude of Small-Signal, Common-Source

Short-Circuit Forward Transfer Admittance

VGS = 0, VDS = 5.0V dc, f = 1.0kHz

|Yfs2|

2,000

6,250

μmho

Small-Signal, Common-Source Short-Circuit

Input Capacitance

VGS = 0, VDS = 5.0V dc, f = 1.0MHz

Ciss

10

pF

Common-Source Spot Noise Figure

VGS = 0, VDS = 5.0V dc, f = 1.0kHz

BW = 16%, RG = 1.0 megohms

egen = 1.82mV dc, RL = 220Ω

NF

3.0

dB

TO-18

(TO-206AA)

Codice articolo simile - 2N2609

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Microsemi Corporation	2N2609	45Kb / 1P	P-CHANNEL J-FET
Central Semiconductor C...	2N2609	58Kb / 1P	Junction FETs Low Frequency/ Low Noise
Intersil Corporation	2N2609	4Mb / 122P	P-CHANNEL JFET
New Jersey Semi-Conduct...	2N2609	121Kb / 1P	20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A
InterFET Corporation	2N2609	425Kb / 1P	P-Channel Silicon Junction Field-Effect Transistor

More results

Descrizione simile - 2N2609

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
New Jersey Semi-Conduct...	2N5114	495Kb / 1P	P-CHANNEL J-FET
Microsemi Corporation	2N2609	45Kb / 1P	P-CHANNEL J-FET
	2N2608	44Kb / 1P	P-CHANNEL J-FET
	2N5114	60Kb / 2P	P-CHANNEL J-FET
	JAN2N2608	56Kb / 1P	P-CHANNEL J-FET
	2N5114	56Kb / 2P	P-CHANNEL J-FET
	2N4856	49Kb / 2P	N-CHANNEL J-FET
	2N4416A	56Kb / 1P	N-CHANNEL J-FET
	2N4416A	55Kb / 2P	N-CHANNEL J-FET
New Jersey Semi-Conduct...	2N5393	79Kb / 1P	N-CHANNEL J-FET

More results

2N2609 Scheda tecnica(PDF) 1 Page - Microsemi Corporation

2N2609 Scheda tecnica(HTML) 1 Page - Microsemi Corporation

Codice articolo simile - 2N2609

Descrizione simile - 2N2609

Html Pages

1

Scheda tecnica Scarica

Link URL