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BC856AW Scheda tecnica(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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BC856AW Scheda tecnica(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 5 page Any changing of specification will not be informed individual BC856AW, BW BC857AW, BW, CW BC858AW, BW, CW http://www.SeCoSGmbH.com Elektronische Bauelemente ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage BC856 BC857 BC858 VCBO Ic= -10µA, IE=0 -80 -50 -30 V Collector-emitter breakdown voltage BC856 BC857 BC858 VCEO Ic= -10mA, IB=0 -65 -45 -30 V Emitter-base breakdown voltage VEBO IE= -1µA, IC=0 , IE=0 -5 V DC current gain BC856AW,857AW,858AW BC856BW,857BW,858BW BC857CW,BC858CW hFE VCE= -5V, IC= -2 mA 125 220 420 250 475 800 Collector Cutoff Current ICBO VCB=-30V -15 nA Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -5mA IC=-100mA, IB= -5mA -0.65 -1.1 V Base-emitter saturation voltage VBE(sat) V Transition frequency fT VCE= -5V, IC= -10mA f=100MHz 100 MHz Collector output capacitance Cob VCB=-10V,f= 1MHz 4.5 pF 01-Jun-2002 Rev. A Page 2 of 4 |
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