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2SC2551 Scheda tecnica(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC2551 Scheda tecnica(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 3 page 2SC2551 0.1 A , 300 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente 21-Feb-2011 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C E K F D B G H J Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High Voltage Low Saturation Voltage Small Collector Output Capacitance Complementary to 2SA1091 CLASSIFICATION OF hFE(1) Product-Rank 2SC2551-R 2SC2551-O Range 30~90 50~150 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 300 V Collector to Emitter Voltage VCEO 300 V Emitter to Base Voltage VEBO 6 V Collector Current - Continuous IC 0.1 A Collector Power Dissipation PC 400 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 300 - - V IC=100μA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 300 - - V IC=1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 6 - - V IE=100μA, IC=0 Collector Cut – Off Current ICBO - - 0.1 μA VCB=300V, IE=0 Emitter Cut – Off Current IEBO - - 0.1 μA VEB=6V, IC=0 DC Current Gain hFE(1) 30 - 150 VCE=10V, IC=20mA hFE(2) * 20 - - VCE=10V, IC=1mA Collector to Emitter Saturation Voltage VCE(sat) - - 0.5 V IC=20mA, IB=2mA Base to Emitter voltage VBE(sat) - - 1.2 V IC=20mA, IB=2mA Transition Frequency fT - 80 - MHz VCE=10V, IC=20mA Collector Output Capacitance Cob - - 4 pF VCB=20V, IE=0, f=1MHz Emitter Collector Base TO-92 REF. Millimeter Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 |
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