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LS4117_TO-71 Scheda tecnica(PDF) 1 Page - Micross Components

Il numero della parte LS4117_TO-71
Spiegazioni elettronici  Ultra-High Input Impedance N-Channel JFET
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Produttore elettronici  MICROSS [Micross Components]
Homepage  http://www.micross.com
Logo MICROSS - Micross Components

LS4117_TO-71 Scheda tecnica(HTML) 1 Page - Micross Components

  LS4117_TO-71 Datasheet HTML 1Page - Micross Components  
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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx
FEATURES 
DIRECT REPLACEMENT FOR SILICONIX 2N4117 
LOW POWER 
IDSS<90 µA  
MINIMUM CIRCUIT LOADING 
IGSS<10 pA 
ABSOLUTE MAXIMUM RATINGS  
@ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature ‐65°C to +175°C 
Operating Junction Temperature ‐55°C to +150°C 
Maximum Power Dissipation 
Continuous Power Dissipation  
300mW 
MAXIMUM CURRENT
Gate Current (Note 1) 
50mA 
MAXIMUM VOLTAGES 
Gate to Drain or Gate to Source (Note 2) ‐40V 
  
 
LS4117 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
MAX 
UNITS 
CONDITIONS 
BVGSS 
Gate to Source Breakdown Voltage ‐40 
‐‐ 
‐‐ 
IG = ‐1µA,   VDS = 0V 
VGS(off) 
Gate to Source Cutoff Voltage ‐0.6 
‐‐ 
‐1.8 
                  VDS = 10V,   ID = 1nA 
IDSS 
Gate to Source Saturation Current 
0.03 
‐‐ 
0.09 
mA 
VDS = 10V,   VGS = 0V 
IGSS 
Gate Leakage Current 
‐‐ 
‐‐ 
‐10 
pA 
VGS = ‐20V,  VDS = 0V 
‐‐ 
‐‐ 
‐25 
VGS = ‐20V,  VDS = 0V,  150°C 
gfs 
Forward Transconductance(Note 3) 
70 
‐‐ 
210 
µmho 
VDS = 10V,   VGS = 0V,   f = 1kHz 
 
gos 
Output Conductance 
‐‐ 
‐‐ 
Ciss 
Input Capacitance 
‐‐ 
‐‐ 
pF 
VDS = 10V,   VGS = 0V,   f = 1MHz 
Crss 
Reverse Transfer Capacitance 
‐‐ 
‐‐ 
1.5 
  
 
 
 
 
 
  
 
 
 
 
 
 
NOTES 
1 . Absolute maximum ratings are limiting values above which LS4117 serviceability may be impaired.  
2.  Due to symmetrical geometry, these units may be operated with source and drain leads interchanged 
3. This parameter is measured during a 2ms interval 100ms after power is applied.  (Not a JEDEC condition.) 
The LS4117 is an Ultra-High Input Impedance N-Channel JFET
LS4117
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N4117
Micross Components Europe
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
TO-71 (Bottom View)
Available Packages:
LS4117 in TO-71
LS4117 in bare die.
Please contact Micross for full
package and die dimensions
LS4117 Benefits:
Insignificant Signal Loss/Error Voltage
with High-Impedance Source
Low Power Consumption (Battery)
Maximum Signal Output, Low Noise
High Sensitivity to Low-Level Signals
The LS4117 provides ultra-high input impedance. The
device is specified with a 10-pA limit and is ideal for use
as a high-impedance sensitive front-end amplifier.
LS4117 Applications:
High-Impedance Transducer
Smoke Detector Input
Infrared Detector Amplifier
Precision Test Equipment


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