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BFY181 Scheda tecnica(PDF) 3 Page - Infineon Technologies AG

Il numero della parte BFY181
Spiegazioni elettronici  HiRel NPN Silicon RF Transistor
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Produttore elettronici  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFY181 Scheda tecnica(HTML) 3 Page - Infineon Technologies AG

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BFY181
IFAG IMM RPD D HIR
3 of 4
V 2, February 2011
Electrical Characteristics (continued)
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Base-Emitter forward voltage
IE = 15 mA, IC = 0
VFBE
-
-
1
V
DC current gain
IC = 5 mA, VCE = 6 V
hFE
55
100
175
-
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 500 MHz
IC = 10 mA, VCE = 8 V, f = 500 MHz
fT
6.5
-
7.5
8
-
-
GHz
Collector-base capacitance
VCB = 10 V, VBE = vbe = 0, f = 1 MHz
CCB
-
0.21
0.29
pF
Collector-emitter capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
CCE
-
0.34
-
pF
Emitter-base capacitance
VEB = 0.5V, VCB = vcb = 0, f = 1 MHz
CEB
-
0.45
0.6
pF
Noise Figure
IC = 4 mA, VCE = 5 V, f = 2 GHz,
ZS = ZSopt
F
-
2.2
2.9
dB
Power gain
IC = 10 mA, VCE = 5V, f = 2 GHz
ZS = ZSopt , ZL= ZLopt
Gma
1.)
13.5
14.5
-
dB
Transducer gain
IC = 10 mA, VCE = 5 V, f = 2 GHz
ZS = ZL = 50 
|S21e|
2
10
11
-
dB
Notes.:
1)
G
S
S
k
k
ma
21
12
1
2
(
) ,
G
S
S
ms
21
12


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