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TLPGE18TPF Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor |
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TLPGE18TPF Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor |
3 / 8 page TL(PGE,FGE,GE,PYE)18TP(F) 2009-01-26 3 Electrical and Optical Characteristics (Ta = 25°C) Typ. Emission Wavelength Luminous Intensity IV Forward Voltage VF Reverse Current IR Product Name λd λP Δλ IF Min Typ. IF Typ. Max IF Max VR TLPGE18TP(F) 558 562 14 20 85 200 20 2.1 2.4 20 50 4 TLFGE18TP(F) 565 568 15 20 85 300 20 2.0 2.4 20 50 4 TLGE18TP(F) 571 574 17 20 272 700 20 2.0 2.4 20 50 4 TLPYE18TP(F) 580 583 14 20 272 750 20 2.0 2.4 20 50 4 Unit nm mA mcd mA V mA μA V Precautions Please be careful of the following: • Soldering temperature: 260°C max, soldering time: 3 s max (soldering portion of lead: up to 1.6 mm from the body of the device) • If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. • This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. |
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