BTA208S-600F datasheet(3/13 Pages) NXP

Il numero della parte	BTA208S-600F

Spiegazioni elettronici	3Q Hi-Com Triac Triggering in three quadrants only

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BTA208S-600F

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Product data sheet

Rev. 5 — 13 April 2011

3 of 13

NXP Semiconductors

BTA208S-600F

3Q Hi-Com Triac

4.

Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDRM

repetitive peak off-state voltage

-

600

V

IT(RMS)

RMS on-state current

full sine wave; Tmb ≤ 102 °C; see Figure

1; see Figure 2; see Figure 3

-8

A

ITSM

non-repetitive peak on-state

current

full sine wave; Tj(init) =25°C;

tp = 20 ms; see Figure 4; see Figure 5

-65

A

full sine wave; Tj(init) =25°C;

tp =16.7ms

-72

A

I2tI2t for fusing

tp = 10 ms; sine-wave pulse

-

21

A2s

dIT/dt

rate of rise of on-state current

IT =12A; IG = 0.2 A; dIG/dt = 0.2 A/µs

-

100

A/µs

IGM

peak gate current

-

2

A

VGM

peak gate voltage

-

5

V

PGM

peak gate power

-

5

W

PG(AV)

average gate power

over any 20 ms period

-

0.5

W

Tstg

storage temperature

-40

150

°C

Tj

junction temperature

-

125

°C

Fig 1.

RMS on-state current as a function of heatsink

temperature; maximum values

Fig 2.

RMS on-state current as a function of surge

duration; maximum value

Tmb (°C)

−50

150

100

050

003aaf581

4

6

2

8

10

IT(RMS)

0

102

°C

(A)

0

5

10

15

20

25

surge duration (s)

10−2

10

1

10−1

003aaf617

IT(RMS)

(A)

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