2SD1664-X-AB3-R datasheet(3/4 Pages) UTC

Il numero della parte	2SD1664-X-AB3-R

Spiegazioni elettronici	MEDIUM POWER NPN TRANSISTOR

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Produttore elettronici	UTC [Unisonic Technologies]

Homepage	http://www.utc-ic.com

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3 / 4 page

2SD1664

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R208-025.C

TYPICAL CHARACTERISTICS

0

0.2

500

1

Base-Emitter Voltage, VBE(V)

Grounded Emitter Propagation Characteristics

200

12

5 10 20

200

50

Collector Current, IC(mA)

DC Current Gain vs.Collector Current (I)

100

0.4

0.6

0.8

1.6

1.4

1.2

1.0

2

5

10

VCE =6V

Ta=100°C

Ta=25°C

Ta= 55°C

0

500

0

Collector-Emitter Voltage, VCE(V)

Grounded Emitter Output Characteristics

100

0.4

0.8

1.6

2.0

1.2

200

300

400

2.0mA

IB =0mA

Ta=25°C

2.5mA

1.5mA

1.0mA

0.5mA

3.0mA

3.5mA

4.0mA

4.5

mA

50 100 200 500 1000

500

1000

Ta=25°C

VcE= 3V

VcE= 1V

12

5 10 20

200

50

Collector Current, IC(mA)

DC Current Gain vs.Collector Current (II)

100

50 100 200 500 1000

500

1000

VcE= 3V

Ta=100°C

Ta=25°C

Ta= -55°C

12

5

10 20

0.05

0.01

Collector Current, IC(mA)

Collector-Emitter Saturation Voltage vs.

Collector Current (I)

0.02

50 100 200

500 1000

0.1

0.2

0.5

Ta=25°C

IC/IB=10

20

50

100

2000

IC/IB=50

IC/IB=20

12

5

10 20

0.05

0.01

Collector Current, IC(mA)

Collector-Emitter Saturation Voltage vs.

Collector Current (II)

0.02

50 100 200

500 1000

0.1

0.2

0.5

Ta=25°C

Ta=100°C

Ta=-40°C

IC/ IB=10

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