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2SC4617G-X-AE3-R Scheda tecnica(PDF) 3 Page - Unisonic Technologies |
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2SC4617G-X-AE3-R Scheda tecnica(HTML) 3 Page - Unisonic Technologies |
3 / 5 page 2SC4617 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 5 www.unisonic.com.tw QW-R206-081.D TYPICAL CHARACTERISTICS 0 0.6 1.0 1.2 1.6 50 Grounded Emitter Propagation Characteristics 20 10 2 0.5 5 1 0.2 0.1 0.2 0.4 0.8 1.4 VCE = 6V 25℃ Ta=100℃ -55℃ Base to Emitter Voltage, VBE (V) Collector to Emitter Voltage, VCE (V) 80 0 0.8 1.2 1.6 20 100 40 0.4 2.0 60 0 Ta = 25℃ 0.40mA 0.35mA 0.30mA 0.25mA 0.20mA 0.15mA 0.10mA 0.05mA IB = 0A Grounded Emitter Output Characteristics (I) 0.50mA 0.45mA |
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