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2SC4027 Scheda tecnica(PDF) 4 Page - Unisonic Technologies |
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2SC4027 Scheda tecnica(HTML) 4 Page - Unisonic Technologies |
4 / 5 page 2SC4027 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 4 of 5 www.unisonic.com.tw QW-R209-018.B TYPICAL CHARACTERISTICS 0 2 1.4 Collector Current vs. Collector to Emitter Voltage 13 4 1.6 1.8 5 Collector to Emitter Voltage, VCE (V) 50mA 40mA 30mA 20mA 10mA 5mA 2mA 1mA IB=0 1.2 1.0 0.8 0.6 0.4 0.2 0 020 0.8 Collector Current vs. Collector to Emitter Voltage 10 30 40 1.0 50 Collector to Emitter Voltage, VCE (V) 4.0mA 3.5mA 3.0mA 2.5mA 0.5mA 0.6 0.4 0.2 0 4.5mA 2.0mA 1.5mA 1.0mA IB=0 0 0.4 Collector Current vs. Base to Emitter Voltage 0.2 0.6 0.8 1.6 1.2 Base to Emitter Voltage, VBE (V) 1.2 0.8 0.4 0 VCE=5V Ta=75°C Ta=25°C Ta=-25°C DC Current vs. Collector Current 1000 Collector Current, Ic (A) 100 10 VCE=5V -25°C 25°C 0.01 0.1 1.0 1.0 Ta=75°C Gain Bandwidth Product vs. Collector Current Collector Current, Ic (A) 100 10 VCE=10V 0.01 0.1 1.0 1.0 Output Capacitance vs. Collector to Base Voltage 100 100 Collector to Base Voltage, VCB (V) 10 f=1MHz 10 |
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