Motore di ricerca datesheet componenti elettronici |
|
BAP51-02 Scheda tecnica(PDF) 3 Page - NXP Semiconductors |
|
BAP51-02 Scheda tecnica(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 2000 Jul 06 3 Philips Semiconductors Product specification General purpose PIN diode BAP51-02 GRAPHICAL DATA handbook, halfpage MGS322 10 2 5 1 10−1 110 IF (mA) r D ( Ω) Fig.2 Forward resistance as a function of forward current; typical values. f = 100 MHz; Tj =25 °C. handbook, halfpage 020 VR (V) Cd (fF) 500 0 100 MGS323 200 300 400 4 8 12 16 Fig.3 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj =25 °C. handbook, halfpage 0.5 3 0 |s21| 2 (dB) −2.5 −2 MGT264 −1.5 −1 −0.5 1 1.5 2 2.5 f (GHz) (1) (2) (3) Fig.4 Insertion loss ( |s21|2) of the diode as a function of frequency; typical values. (1) IF = 10 mA. (2) IF = 1 mA. (3) IF = 0.5 mA. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb =25 °C. handbook, halfpage 0.5 3 0 |s21| 2 (dB) −25 −20 MGT265 −15 −10 −5 1 1.5 2 2.5 f (GHz) Fig.5 Isolation ( |s21|2) of the diode as a function of frequency; typical values. Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb =25 °C. |
Codice articolo simile - BAP51-02_00 |
|
Descrizione simile - BAP51-02_00 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |