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SI4190DY Scheda tecnica(PDF) 2 Page - Vishay Siliconix

Il numero della parte SI4190DY
Spiegazioni elettronici  N-Channel 100 V (D-S) MOSFET
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Document Number: 66595
S10-2686-Rev. C, 22-Nov-10
Vishay Siliconix
Si4190DY
New Product
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
100
V
VDS Temperature Coefficient
V
DS/TJ
ID = 250 µA
47
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
- 5.8
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
1.2
2.8
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V
1
µA
VDS = 100 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
30
A
Drain-Source On-State Resistancea
RDS(on)
VGS 10 V, ID = 15 A
0.0073
0.0088
VGS 4.5 V, ID = 10 A
0.0093
0.0120
Forward Transconductancea
gfs
VDS = 15 V, ID = 15 A
58
S
Dynamicb
Input Capacitance
Ciss
VDS = 50 V, VGS = 0 V, f = 1 MHz
2000
pF
Output Capacitance
Coss
1120
Reverse Transfer Capacitance
Crss
56
Total Gate Charge
Qg
VDS = 50 V, VGS = 10 V, ID = 10 A
38.6
58
nC
VDS = 50 V, VGS = 4.5 V, ID = 10 A
18.3
28
Gate-Source Charge
Qgs
5.4
Gate-Drain Charge
Qgd
7.3
Gate Resistance
Rg
f = 1 MHz
0.6
2.7
5.4
Turn-On Delay Time
td(on)
VDD = 50 V, RL = 5 
ID  10 A, VGEN = 7.5 V, Rg = 1 
12
24
ns
Rise Time
tr
13
26
Turn-Off Delay Time
td(off)
40
70
Fall Time
tf
11
22
Turn-On Delay Time
td(on)
VDD = 50 V, RL = 5 
ID  10 A, VGEN = 10 V, Rg = 1 
10
20
Rise Time
tr
10
20
Turn-Off Delay Time
td(off)
40
70
Fall Time
tf
11
22
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
7.0
A
Pulse Diode Forward Currenta
ISM
70
Body Diode Voltage
VSD
IS = 5 A
0.75
1.1
V
Body Diode Reverse Recovery Time
trr
IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C
51
100
ns
Body Diode Reverse Recovery Charge
Qrr
51
100
nC
Reverse Recovery Fall Time
ta
24
ns
Reverse Recovery Rise Time
tb
27


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