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SI4190DY Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SI4190DY Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com 2 Document Number: 66595 S10-2686-Rev. C, 22-Nov-10 Vishay Siliconix Si4190DY New Product Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 100 V VDS Temperature Coefficient V DS/TJ ID = 250 µA 47 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ - 5.8 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1.2 2.8 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 1 µA VDS = 100 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V 30 A Drain-Source On-State Resistancea RDS(on) VGS 10 V, ID = 15 A 0.0073 0.0088 VGS 4.5 V, ID = 10 A 0.0093 0.0120 Forward Transconductancea gfs VDS = 15 V, ID = 15 A 58 S Dynamicb Input Capacitance Ciss VDS = 50 V, VGS = 0 V, f = 1 MHz 2000 pF Output Capacitance Coss 1120 Reverse Transfer Capacitance Crss 56 Total Gate Charge Qg VDS = 50 V, VGS = 10 V, ID = 10 A 38.6 58 nC VDS = 50 V, VGS = 4.5 V, ID = 10 A 18.3 28 Gate-Source Charge Qgs 5.4 Gate-Drain Charge Qgd 7.3 Gate Resistance Rg f = 1 MHz 0.6 2.7 5.4 Turn-On Delay Time td(on) VDD = 50 V, RL = 5 ID 10 A, VGEN = 7.5 V, Rg = 1 12 24 ns Rise Time tr 13 26 Turn-Off Delay Time td(off) 40 70 Fall Time tf 11 22 Turn-On Delay Time td(on) VDD = 50 V, RL = 5 ID 10 A, VGEN = 10 V, Rg = 1 10 20 Rise Time tr 10 20 Turn-Off Delay Time td(off) 40 70 Fall Time tf 11 22 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 7.0 A Pulse Diode Forward Currenta ISM 70 Body Diode Voltage VSD IS = 5 A 0.75 1.1 V Body Diode Reverse Recovery Time trr IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C 51 100 ns Body Diode Reverse Recovery Charge Qrr 51 100 nC Reverse Recovery Fall Time ta 24 ns Reverse Recovery Rise Time tb 27 |
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