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2SK3453 Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor |
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2SK3453 Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page 2SK3453 2009-09-29 3 ID − VDS ID − VDS ID − VGS VDS − VGS ⎪Yfs⎪ − ID RDS (ON) − ID Drain-source voltage VDS (V) Drain-source voltage VDS (V) Gate-source voltage VGS (V) Gate-source voltage VGS (V) Drain current ID (A) Drain current ID (A) 0 2 4 8 6 10 0 4 8 12 16 20 100 Tc = −55°C 25 Common source VDS = 20 V Pulse test 16 0 4 8 12 20 2.5 5 04 8 16 12 20 Common source Tc = 25°C Pulse test ID = 10 A 50 0.1 3 0.1 3 100 100 Tc = −55°C 0.3 25 Common source VDS = 20 V Pulse test 0.5 1 5 10 30 50 0.3 0.5 1 5 10 30 0.1 1 0.1 50 1 VGS = 10, 15 V 0.3 0.5 3 5 10 30 0.3 0.5 3 5 Common source Tc = 25°C Pulse test 10 30 50 8 0 0 2 4 6 10 2 4 8 6 10 Common source Tc = 25°C Pulse test VGS = 4 V 4.6 4.8 5 5.2 6 8 10 16 0 0 4 8 12 20 10 20 40 30 50 VGS = 4 V 5.2 5.6 6 10 8 4.6 Common source Tc = 25°C Pulse test |
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