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2SK3443 Scheda tecnica(PDF) 5 Page - Toshiba Semiconductor |
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2SK3443 Scheda tecnica(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page 2SK3443 2009-09-29 5 Safe operating area Channel temperature (initial) Tch (°C) EAS – Tch rth – tw Pulse width tw (S) −15 V 15 V Test circuit Wave form IAR BVDSS VDD VDS RG = 25 Ω VDD = 50 V, L = 773 μH ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − ⋅ ⋅ ⋅ = VDD BVDSS BVDSS 2 I L 2 1 ΕAS Drain-source voltage VDS (V) DC operation Tc = 25°C VDSS max 0.1 1 3 10 30 100 300 0.3 1 3 10 30 100 300 * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 100 μs * 1 ms * ID max (pulsed) * 1 0.1 0.00001 0.0001 10 0.001 0.01 0.1 1 10 Single pulse 0.2 0.1 0.05 0.02 0.01 T PDM t Duty = t/T Rth (ch-c) = 1.0°C/W Duty = 0.5 0.01 0 25 100 200 300 500 400 50 75 100 125 150 |
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