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2SD1947A Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor

Il numero della parte 2SD1947A
Spiegazioni elettronici  High-Current Switching Applications
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SD1947A Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor

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2SD1947A
2006-11-21
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SD1947A
High-Current Switching Applications
Lamp, Solenoid Drive Applications
• High DC current gain: hFE = 500 to 1500 (IC = 1 A)
• Low collector saturation voltage: VCE (sat) = 0.3 V (max) (IC = 5 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
7
V
DC
IC
10
Collector current
Pulse
ICP
15
A
Base current
IB
2
A
Ta = 25°C
2.0
Collector power
dissipation
Tc = 25°C
PC
40
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Base
Emitter
Collector


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