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2SD1525 Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor |
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2SD1525 Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor |
3 / 4 page 2SD1525 2009-08-06 3 Collector-emitter voltage VCE (V) IC – VCE hFE – IC Collector current IC (A) VCE (sat) – IC Collector current IC (A) VBE (sat) – IC Collector current IC (A) Safe Operating Area Base-emitter voltage VBE (V) IC – VBE Collector-emitter voltage VCE (V) 0 0 16 32 2 4 6 8 IB = 1 mA 2 0 Common emitter Tc = 25°C 10 8 24 8 3 6 4 7 5 12 10000 0.1 100 300 500 1000 3000 0.3 1 3 10 100 Tc = 100°C 25 −55 Common emitter VCE = 5 V 30 5000 0.5 0.1 10 Tc = −55°C 100 25 Common emitter IC/IB = 100 1 1 10 0.3 100 0.1 0.3 3 5 3 30 Common emitter IC/IB = 100 0.5 0.1 3 5 0.3 1 10 100 Tc = −55°C 25 100 3 30 1 10 0.3 0 Tc = 25°C 100 −55 16 1.6 3.2 0.8 2.4 0 8 24 Common emitter VCE = 5 V 5 30 100 300 2 50 0.5 1 3 5 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. IC max (continuous) IC max (pulsed)* VCEO max 1 ms* 10 ms* 0.5 ms* DC operation Tc = 25°C 0.1 0.3 3 ms* 10 30 10 |
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