2SD1407A

2009-07-24

1

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SD1407A

Power Amplifier Applications

• Complementary to 2SB1016A

Characteristics

Symbol

Rating

Unit

Collector-base voltage

100

V

Collector-emitter voltage

100

V

Emitter-base voltage

5

V

Collector current

5

A

Base current

0.5

A

Collector power dissipation

(Tc = 25°C)

30

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Industrial Applications

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-10R1A

Weight: 1.7 g (typ.)