BTA208X-800B datasheet(6/13 Pages) NXP

Il numero della parte	BTA208X-800B

Spiegazioni elettronici	3Q Hi-Com Triac High voltage capability

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BTA208X-800B

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Product data sheet

Rev. 03 — 3 February 2011

6 of 13

NXP Semiconductors

BTA208X-800B

3Q Hi-Com Triac

7.

Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

IGT

gate trigger current

VD =12V; IT = 0.1 A; T2+ G+;

Tj =25°C; see Figure 7

2

1850mA

VD =12V; IT = 0.1 A; T2+ G-;

Tj =25°C; see Figure 7

2

2150mA

VD =12V; IT = 0.1 A; T2- G-;

Tj =25°C; see Figure 7

2

3450mA

IL

latching current

VD =12V; IG = 0.1 A; T2+ G+;

Tj =25°C; see Figure 8

-

3160mA

VD =12V; IG = 0.1 A; T2+ G-;

Tj =25°C; see Figure 8

-

3490mA

VD =12V; IG = 0.1 A; T2- G-;

Tj =25°C; see Figure 8

-

3060mA

IH

holding current

VD =12V; Tj =25 °C; see Figure 9

-

3160mA

VT

on-state voltage

IT =10A; Tj = 25 °C; see Figure 10

-

1.3

1.65

V

VGT

gate trigger voltage

VD =12V; IT = 0.1 A; Tj =25°C;

see Figure 11

-0.7

1.5

V

VD =400 V; IT = 0.1 A; Tj = 125 °C

0.25

0.4

-

V

ID

off-state current

VD =800 V; Tj = 125 °C

-

0.1

0.5

mA

Dynamic characteristics

dVD/dt

rate of rise of off-state

voltage

VDM =536 V; Tj = 125 °C; exponential

waveform; gate open circuit

1000

4000

-

V/µs

dIcom/dt

rate of change of

commutating current

VD =400 V; Tj = 125 °C; IT(RMS) =8A;

dVcom/dt = 20 V/µs; gate open circuit;

snubberless condition; see Figure 12

-14

-A/ms

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